| 영문 | secondary infection | 한글 | 이차감염 |
|---|---|---|---|
| 설명 | 어떤 병원체의 감염에 의하여 본인의 저항력이 약해졌을 때 몸의 다른 부위로 전이하여 다시 감염을 일으키는 것. 병원체가 인체에 침입하여 특정한 기관이나 조직에서 병원체가 증식하고, 그곳에 특유의 병터를 일으키는 것이 1차감염 또는 초감염이다. 이 1차감염의 병터의 병원체가 혈관-림프관-기관-소화관-요관 등의 길을 따라 같은 기관의 다른 부위나 다른 기관으로 운반되어 감염을 일으킨다. 따라서 1차감염에 의하여 충분한 면역이 될 경우에는 2차감염이 일어나지 않는다. 예를 들어, 유행성 감기에 걸렸을 때 세균에 의한 폐렴이 뒤따르는 경우를 이른다. 폐렴균, 화농알균, 대장균 따위가 있다. |
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| 영문 | electron microscope | 한글 | 전자현미경 |
|---|---|---|---|
| 설명 | 전기 마당 또는 자기 마당을 이용하여 전자류를 전자 렌즈에 집속시켜, 그 통로에 놓인 표본의 상을 확대하는 장치. 광학 현미경보다 훨씬 뛰어난 분해 능력을 가진다. |
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| SA | salicylic acid; saline [solution]; salt added; sarcoidosis; sarcoma; scalenus anticus; secondary ame... |
|---|---|
| EM | early memory; ejection murmur; electromagnetic; electron micrograph; electron microscopy, electron m... |
| SEM | sample evaluation method; scanning electron microscopy; secondary enrichment medium; standard error ... |
| EI | Edmonton injector; electrolyte imbalance; electron impact; electron ionization; emotionally impaired... |
| E/M | electron microscope, electron microscopy; evaluation and management |
| SE | secondary electron |
|---|---|
| LSIMS | Liquid secondary ion mass spectrometry |
| S | Secondary |
| SIMS | Secondary Ion Mass Spectrometry |
| SLC | Secondary Lymphoid-tissue Chemokine |
| secondary electron | <microscopy> Produced by an incident electron passing near an atom in the specimen, near enough to impart some of its energy to a lower energy electron (usually in the K-shell). This causes a slight energy loss and path change in the incident electron and the ionisation of the electron in the specimen atom. This ionised electron then leaves the atom with a very small kinetic energy (5eV) and is then termed a secondary electron. Each incident electron can produce several secondary electrons. (05 Aug 1998) |
|---|---|
| secondary electron imaging | <microscopy> Production of secondary electrons is very topography related. Due to their low energy, 5eV, only secondaries that are very near the surface (less than 10nm) can exit the sample and be examined. Any changes in topography in the sample that are larger than this sampling depth will change the yield of secondaries due to collection efficiencies. Collection of these electrons is aided by using a collector in conjunction with the secondary electron detector. The collector is a grid or mesh with a +100V potential applied to it which is placed in front of the detector, attracting the negatively charged secondary electrons to it which then pass through the grid-holes and into the detector to be counted. When a Secondary Electrons collide with the solid-state saemiconductor detector an electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image. (05 Aug 1998) |
| aperture for electron microscopy | <technique> Anode aperture: The opening in the accelerating voltage anode shield of the electron gun through which the electrons must pass to irradiate the specimen. Condenser aperture: An opening in the condenser lens controlling the number of electrons entering the lens and the angular aperture of the electron beam. The angular aperture can also be controlled by the condenser lens current. Physical objective aperture: A metallic diaphragm, with a small central hole, used to limit the cone of electrons accepted by the objective lens. This improves image-contrast since highly scattered electrons are prevented from arriving at the Gaussian image plane and therefore cannot contribute to background fog. Aplanatic. Free from spherical aberration and coma. (05 Aug 1998) |
|---|---|
| Auger electron | An electron ejected from a lower energy orbital after a photoelectric interaction of an X-ray photon with a K-shell electron by the characteristic radiation photon; the Auger electron recoils with energy equal to the characteristic radiation less the difference in shell binding energies. See: photoelectric effect. (05 Mar 2000) |
| backscattered electron | <microscopy> Produced by an incident electron colliding with the nucleus of an atom in the specimen. The incident electron is then scattered backward about 180 degrees with no appreciable loss of energy, an elastic collision. (05 Aug 1998) |
| backscattered electron imaging | <microscopy> The production of backscattered electrons from a sample varies directly with the specimen's average atomic number, higher atomic number elements produce more backscattered electrons than lower atomic number ones. Detection of Backscattered Electrons is achieved by using a donut shaped solid state saemiconductor device mounted on the bottom of the objective lens. When Backscattered Electrons strike the detector electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image. By splitting the detector into halves (or quadrants) differences in the signal level on the individual detector segments provide surface topography information. (05 Aug 1998) |
| valence electron | One of the electron's that take part in chemical reactions of an atom. (05 Mar 2000) |
| Parallel Electron Energy Loss Spectroscopy | <technique> Electron energy loss spectroscopy analyses the inelastically scattered electrons present in the beam after it has been transmitted through the sample. An electron energy loss spectrum typically consists of a monatomic decreasing background on which are superimposed a number of peaks. Each peak is characteristic of the scattering process that has occurred in the sample. The peaks can be used to obtain information about the chemical composition and electronic structure of the sample. Electron energy loss spectra are acquired typically in a magnetic sector spectrometer located under the camera chamber of the transmission electron microscope. Spatial resolution is typically limited by the minimum probe diameter of the microscope. Electron energy loss spectroscopy tends to be complimentary to EDS in that it can be used to analyse very thin samples of low Z materials. Acronym: PEELS (05 Aug 1998) |
| reverse electron transport | <chemistry> The energy-dependent movement of electrons against the thermodynamic gradient to form a strong reductant from a weaker electron donor. (11 Jan 1998) |
| microscope, electron | <microscopy> An electron-optical device which produces a magnified image of an object. Detail may be revealed by virtue of selective transmission, reflection, or emission of electrons by the object. (05 Aug 1998) |
| microscopy, electron | Visual and photographic microscopy in which electron beams with wavelengths thousands of times shorter than visible light are used in place of light, thereby allowing much greater magnification. (12 Dec 1998) |
| microscopy, electron, scanning | Microscopy in which the object is examined directly by an electron beam scanning the specimen point-by-point, giving the surface image a three-dimensional quality. (12 Dec 1998) |
| microscopy, electron, scanning transmission | A type of electron microscopy which scans with an extremely narrow beam that is transmitted through the sample. The detection apparatus produces an image whose brightness depends on the atomic number of the sample. It should not be confused with microscopy, electron scanning nor with microscopy, electron, transmission (see microscopy, electron). (12 Dec 1998) |
| Conventional Transmission Electron Microscopy | <technique> A term applied to 'normal' transmission electron microscopy imaging. The electron beam is passed through a thin film sample (typically ~1-200 nm thick). Bright field diffraction contrast images are formed with the direct (undiffracted) beam. Dark field images are formed with a selected diffracted beam. CTEM imaging is used in the general observation of samples and careful selection of the diffracting conditions of the sample will allow the analysis of defect structures within the sample. (05 Aug 1998) |
| Convergent Beam Electron Diffraction | <microscopy> An electron probe is tightly focused on a transmission electron microscopy specimen and the resulting pattern of diffracted electrons is observed. The patterns contains information on the crystal symmetry and atomic and electronic structure of the sample. Regions as small as 0.2 nm may be examined. Acronym: CBED (05 Aug 1998) |
| conversion electron | An internal conversion electron. (05 Mar 2000) |
| positive electron | A subatomic particle of mass and charge equal to the electron but of opposite (i.e., positive) charge. Synonym: positive electron. (05 Mar 2000) |
제품명 |
판매사 |
보험코드 | 성분/함량 | 구분/보험급여 |
|---|
제품명 |
판매사 |
보험코드 | 성분/함량 | 구분/보험급여 |
|---|