| MIMS | medical information management system; medical inventory management system |
|---|---|
| PDS | pain-dysfunction syndrome; paroxysmal depolarizing shift; patient data system; Patient-Doctor Societ... |
| PNS | paraneoplastic syndrome; parasympathetic nervous system; partial nonprogressive stroke; peripheral n... |
| PPS | Personal Preference Scale; physician, patient and society [course]; polyvalent pneumococcal polysacc... |
| RAS | rapid atrial stimulation; recurrent aphthous stomatitis; reflex activating stimulus; reliability, av... |
| Conventional Transmission Electron Microscopy | <technique> A term applied to 'normal' transmission electron microscopy imaging. The electron beam is passed through a thin film sample (typically ~1-200 nm thick). Bright field diffraction contrast images are formed with the direct (undiffracted) beam. Dark field images are formed with a selected diffracted beam. CTEM imaging is used in the general observation of samples and careful selection of the diffracting conditions of the sample will allow the analysis of defect structures within the sample. (05 Aug 1998) |
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| Convergent Beam Electron Diffraction | <microscopy> An electron probe is tightly focused on a transmission electron microscopy specimen and the resulting pattern of diffracted electrons is observed. The patterns contains information on the crystal symmetry and atomic and electronic structure of the sample. Regions as small as 0.2 nm may be examined. Acronym: CBED (05 Aug 1998) |
| conversion electron | An internal conversion electron. (05 Mar 2000) |
| positive electron | A subatomic particle of mass and charge equal to the electron but of opposite (i.e., positive) charge. Synonym: positive electron. (05 Mar 2000) |
| scanning electron microscope | <instrument> An electron microscope in which the image is formed by a beam synchronised with an electron probe scanning the object. The intensity of the image forming beam is proportional to the scattering or secondary emission of the specimen where the probe strikes it (05 Aug 1998) |
| scanning electron microscopy | <procedure> Technique of electron microscopy in which the specimen is coated with heavy metal and then scanned by an electron beam. The image is built up on a monitor screen (in the same way as the raster builds a conventional television image). The resolution is not so great as with transmission electron microscopy, but preparation is easier (often by fixation followed by critical point drying), the depth of focus is relatively enormous, the surface of a specimen can be seen (though not the interior unless the specimen is cracked open) and the image is aesthetically pleasing. (18 Nov 1997) |
| scanning transmission electron microscopy | <procedure> Method of electron microscopy in which image formation depends upon analysis of the pattern of energies of electrons that pass through the specimen. Has comparable resolving power to conventional transmission EM. (18 Nov 1997) |
| secondary electron | <microscopy> Produced by an incident electron passing near an atom in the specimen, near enough to impart some of its energy to a lower energy electron (usually in the K-shell). This causes a slight energy loss and path change in the incident electron and the ionisation of the electron in the specimen atom. This ionised electron then leaves the atom with a very small kinetic energy (5eV) and is then termed a secondary electron. Each incident electron can produce several secondary electrons. (05 Aug 1998) |
| secondary electron imaging | <microscopy> Production of secondary electrons is very topography related. Due to their low energy, 5eV, only secondaries that are very near the surface (less than 10nm) can exit the sample and be examined. Any changes in topography in the sample that are larger than this sampling depth will change the yield of secondaries due to collection efficiencies. Collection of these electrons is aided by using a collector in conjunction with the secondary electron detector. The collector is a grid or mesh with a +100V potential applied to it which is placed in front of the detector, attracting the negatively charged secondary electrons to it which then pass through the grid-holes and into the detector to be counted. When a Secondary Electrons collide with the solid-state saemiconductor detector an electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image. (05 Aug 1998) |
| Selected Area Electron Diffraction | <technique> In this diffraction mode an aperture is used to define the area from which a diffraction pattern is to be recorded from a thin sample. This aperture is typically located in an image plane below the sample. Selected Area Electron Diffraction patterns are simple spot patterns and are of use in phase determination (lattice spacing measurement) and defect analysis (sample orientation). Acronym: SAED (05 Aug 1998) |
| immune electron microscopy | Electron microscopy of biological specimens to which specific antibody has been bound. (05 Mar 2000) |
| internal conversion electron | An electron, similar to an Auger electron, released from one of the electron orbits of the atom upon activation by a gamma-ray from that atom's nucleus; the electron has kinetic energy equal to the net energy transition of the disintegration. (05 Mar 2000) |
| electron | <chemistry, physics> A stable atomic particle that has a negative charge, the flow ofelectrons through a substance constitutes electricity. (19 Jan 1998) |
| electron acceptor | <chemistry> A molecule or compound that gets electrons during an oxidation-reduction reaction. (19 Jan 1998) |
| electron beam | <microscopy> A stream of electrons in an electron optical system. (05 Aug 1998) |