| IEM | immuno-electron microscopy; inborn error of metabolism |
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| ISEM | immunosorbent electron microscopy |
| PhEEM | photoemission electron microscopy |
| TEM | transmission electron microscope/ microscopy; triethylenemelamine |
| TFM | testicular feminization male; testicular feminization mutation; total fluid movement; transmission e... |
| time-lapse microscopy | Microscopy in which the same object (e.g., a cell) is photographed at regular time intervals over several hours. (05 Mar 2000) |
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| fluorescence microscopy | <procedure> Any type of microscopy in which intrinsic or applied reagents are visualised. Intrinsic fluorescence is often referred to as auto fluorescence. The applied reagents typically include fluorescently labelled proteins that are reactive with sites in the specimen. In particular, fluorescently labelled antibodies are widely used to detect particular antigens in biological specimens. (18 Nov 1997) |
| light microscopy | <procedure> In contrast to electron microscopy. See: bright field, phase contrast, interference, interference contrast, interference reflection, dark field, confocal and fluorescence microscopy. (18 Nov 1997) |
| Auger electron | An electron ejected from a lower energy orbital after a photoelectric interaction of an X-ray photon with a K-shell electron by the characteristic radiation photon; the Auger electron recoils with energy equal to the characteristic radiation less the difference in shell binding energies. See: photoelectric effect. (05 Mar 2000) |
| backscattered electron | <microscopy> Produced by an incident electron colliding with the nucleus of an atom in the specimen. The incident electron is then scattered backward about 180 degrees with no appreciable loss of energy, an elastic collision. (05 Aug 1998) |
| backscattered electron imaging | <microscopy> The production of backscattered electrons from a sample varies directly with the specimen's average atomic number, higher atomic number elements produce more backscattered electrons than lower atomic number ones. Detection of Backscattered Electrons is achieved by using a donut shaped solid state saemiconductor device mounted on the bottom of the objective lens. When Backscattered Electrons strike the detector electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image. By splitting the detector into halves (or quadrants) differences in the signal level on the individual detector segments provide surface topography information. (05 Aug 1998) |
| valence electron | One of the electron's that take part in chemical reactions of an atom. (05 Mar 2000) |
| Parallel Electron Energy Loss Spectroscopy | <technique> Electron energy loss spectroscopy analyses the inelastically scattered electrons present in the beam after it has been transmitted through the sample. An electron energy loss spectrum typically consists of a monatomic decreasing background on which are superimposed a number of peaks. Each peak is characteristic of the scattering process that has occurred in the sample. The peaks can be used to obtain information about the chemical composition and electronic structure of the sample. Electron energy loss spectra are acquired typically in a magnetic sector spectrometer located under the camera chamber of the transmission electron microscope. Spatial resolution is typically limited by the minimum probe diameter of the microscope. Electron energy loss spectroscopy tends to be complimentary to EDS in that it can be used to analyse very thin samples of low Z materials. Acronym: PEELS (05 Aug 1998) |
| reverse electron transport | <chemistry> The energy-dependent movement of electrons against the thermodynamic gradient to form a strong reductant from a weaker electron donor. (11 Jan 1998) |
| microscope, electron | <microscopy> An electron-optical device which produces a magnified image of an object. Detail may be revealed by virtue of selective transmission, reflection, or emission of electrons by the object. (05 Aug 1998) |
| Convergent Beam Electron Diffraction | <microscopy> An electron probe is tightly focused on a transmission electron microscopy specimen and the resulting pattern of diffracted electrons is observed. The patterns contains information on the crystal symmetry and atomic and electronic structure of the sample. Regions as small as 0.2 nm may be examined. Acronym: CBED (05 Aug 1998) |
| conversion electron | An internal conversion electron. (05 Mar 2000) |
| positive electron | A subatomic particle of mass and charge equal to the electron but of opposite (i.e., positive) charge. Synonym: positive electron. (05 Mar 2000) |
| secondary electron | <microscopy> Produced by an incident electron passing near an atom in the specimen, near enough to impart some of its energy to a lower energy electron (usually in the K-shell). This causes a slight energy loss and path change in the incident electron and the ionisation of the electron in the specimen atom. This ionised electron then leaves the atom with a very small kinetic energy (5eV) and is then termed a secondary electron. Each incident electron can produce several secondary electrons. (05 Aug 1998) |
| secondary electron imaging | <microscopy> Production of secondary electrons is very topography related. Due to their low energy, 5eV, only secondaries that are very near the surface (less than 10nm) can exit the sample and be examined. Any changes in topography in the sample that are larger than this sampling depth will change the yield of secondaries due to collection efficiencies. Collection of these electrons is aided by using a collector in conjunction with the secondary electron detector. The collector is a grid or mesh with a +100V potential applied to it which is placed in front of the detector, attracting the negatively charged secondary electrons to it which then pass through the grid-holes and into the detector to be counted. When a Secondary Electrons collide with the solid-state saemiconductor detector an electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image. (05 Aug 1998) |