| Parallel Electron Energy Loss Spectroscopy | <technique> Electron energy loss spectroscopy analyses the inelastically scattered electrons present in the beam after it has been transmitted through the sample. An electron energy loss spectrum typically consists of a monatomic decreasing background on which are superimposed a number of peaks. Each peak is characteristic of the scattering process that has occurred in the sample. The peaks can be used to obtain information about the chemical composition and electronic structure of the sample. Electron energy loss spectra are acquired typically in a magnetic sector spectrometer located under the camera chamber of the transmission electron microscope. Spatial resolution is typically limited by the minimum probe diameter of the microscope. Electron energy loss spectroscopy tends to be complimentary to EDS in that it can be used to analyse very thin samples of low Z materials. Acronym: PEELS (05 Aug 1998) |
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| microscope, electron | <microscopy> An electron-optical device which produces a magnified image of an object. Detail may be revealed by virtue of selective transmission, reflection, or emission of electrons by the object. (05 Aug 1998) |
| microscopy, electron | Visual and photographic microscopy in which electron beams with wavelengths thousands of times shorter than visible light are used in place of light, thereby allowing much greater magnification. (12 Dec 1998) |
| microscopy, electron, scanning | Microscopy in which the object is examined directly by an electron beam scanning the specimen point-by-point, giving the surface image a three-dimensional quality. (12 Dec 1998) |
| microscopy, electron, scanning transmission | A type of electron microscopy which scans with an extremely narrow beam that is transmitted through the sample. The detection apparatus produces an image whose brightness depends on the atomic number of the sample. It should not be confused with microscopy, electron scanning nor with microscopy, electron, transmission (see microscopy, electron). (12 Dec 1998) |
| Conventional Transmission Electron Microscopy | <technique> A term applied to 'normal' transmission electron microscopy imaging. The electron beam is passed through a thin film sample (typically ~1-200 nm thick). Bright field diffraction contrast images are formed with the direct (undiffracted) beam. Dark field images are formed with a selected diffracted beam. CTEM imaging is used in the general observation of samples and careful selection of the diffracting conditions of the sample will allow the analysis of defect structures within the sample. (05 Aug 1998) |
| Convergent Beam Electron Diffraction | <microscopy> An electron probe is tightly focused on a transmission electron microscopy specimen and the resulting pattern of diffracted electrons is observed. The patterns contains information on the crystal symmetry and atomic and electronic structure of the sample. Regions as small as 0.2 nm may be examined. Acronym: CBED (05 Aug 1998) |
| conversion electron | An internal conversion electron. (05 Mar 2000) |
| positive electron | A subatomic particle of mass and charge equal to the electron but of opposite (i.e., positive) charge. Synonym: positive electron. (05 Mar 2000) |
| scanning electron microscope | <instrument> An electron microscope in which the image is formed by a beam synchronised with an electron probe scanning the object. The intensity of the image forming beam is proportional to the scattering or secondary emission of the specimen where the probe strikes it (05 Aug 1998) |
| scanning electron microscopy | <procedure> Technique of electron microscopy in which the specimen is coated with heavy metal and then scanned by an electron beam. The image is built up on a monitor screen (in the same way as the raster builds a conventional television image). The resolution is not so great as with transmission electron microscopy, but preparation is easier (often by fixation followed by critical point drying), the depth of focus is relatively enormous, the surface of a specimen can be seen (though not the interior unless the specimen is cracked open) and the image is aesthetically pleasing. (18 Nov 1997) |
| scanning transmission electron microscopy | <procedure> Method of electron microscopy in which image formation depends upon analysis of the pattern of energies of electrons that pass through the specimen. Has comparable resolving power to conventional transmission EM. (18 Nov 1997) |
| secondary electron | <microscopy> Produced by an incident electron passing near an atom in the specimen, near enough to impart some of its energy to a lower energy electron (usually in the K-shell). This causes a slight energy loss and path change in the incident electron and the ionisation of the electron in the specimen atom. This ionised electron then leaves the atom with a very small kinetic energy (5eV) and is then termed a secondary electron. Each incident electron can produce several secondary electrons. (05 Aug 1998) |
| secondary electron imaging | <microscopy> Production of secondary electrons is very topography related. Due to their low energy, 5eV, only secondaries that are very near the surface (less than 10nm) can exit the sample and be examined. Any changes in topography in the sample that are larger than this sampling depth will change the yield of secondaries due to collection efficiencies. Collection of these electrons is aided by using a collector in conjunction with the secondary electron detector. The collector is a grid or mesh with a +100V potential applied to it which is placed in front of the detector, attracting the negatively charged secondary electrons to it which then pass through the grid-holes and into the detector to be counted. When a Secondary Electrons collide with the solid-state saemiconductor detector an electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image. (05 Aug 1998) |
| Selected Area Electron Diffraction | <technique> In this diffraction mode an aperture is used to define the area from which a diffraction pattern is to be recorded from a thin sample. This aperture is typically located in an image plane below the sample. Selected Area Electron Diffraction patterns are simple spot patterns and are of use in phase determination (lattice spacing measurement) and defect analysis (sample orientation). Acronym: SAED (05 Aug 1998) |