| 영문 | TNM staging system | 한글 | 종양병기분류계통 |
|---|---|---|---|
| 설명 | 종양의 병기(stage)를 결정하는 한 방법. T는 Tumor(종양)를 뜻하며 원발병터의 크기, 주위조직으로의 침윤정도 등에 따라 T1, T2, T3, T4(숫자가 높을 수록 주위로 침윤이 많다) 등으로 나눈다. N은 Node(림프절)를 뜻하며 침범된 림프절의 갯수, 크기, 위치 등에 따라 N1, N2, N3 등으로 나눈다. M은 Metastasis(전이)를 뜻하며 원격전이의 유무에 따라 M0, M1 등으로 나눈다. 이상의 방법으로 T, N, M이 결정되면 이들을 조합하여 최종적인 병기를 결정한다. 이렇게 결정된 병기는 치료 방침 결정과 예후 판단에 매우 중요하다. |
||
| 영문 | central nervous system(CNS) | 한글 | 중추신경계 |
|---|---|---|---|
| 설명 | 신경계는 중추신경계와 말초신경계로 분류할 수가 있다. 중추신경계란 뇌와 척수로 구성되어 있는 신경계를 이르는 말이다. 말초신경계란 이 이외의 모든 신경계를 이르는 말이다. |
||
| OES | oral esophageal stethoscope; optical emission spectroscopy |
|---|---|
| OF | occipitofrontal; open field [test]; optical fundus; orbitofrontal; osmotic fragility; osteitis fibro... |
| OPD | obstetric prediabetic; optical path difference; otopalatodigital [syndrome]; outpatient department; ... |
| OPS | operations; optical position sensor; osteoporosis-pseudolipoma syndrome; outpatient service; outpati... |
| OpScan | optical scanning |
| positive electron | A subatomic particle of mass and charge equal to the electron but of opposite (i.e., positive) charge. Synonym: positive electron. (05 Mar 2000) |
|---|---|
| scanning electron microscope | <instrument> An electron microscope in which the image is formed by a beam synchronised with an electron probe scanning the object. The intensity of the image forming beam is proportional to the scattering or secondary emission of the specimen where the probe strikes it (05 Aug 1998) |
| scanning electron microscopy | <procedure> Technique of electron microscopy in which the specimen is coated with heavy metal and then scanned by an electron beam. The image is built up on a monitor screen (in the same way as the raster builds a conventional television image). The resolution is not so great as with transmission electron microscopy, but preparation is easier (often by fixation followed by critical point drying), the depth of focus is relatively enormous, the surface of a specimen can be seen (though not the interior unless the specimen is cracked open) and the image is aesthetically pleasing. (18 Nov 1997) |
| scanning transmission electron microscopy | <procedure> Method of electron microscopy in which image formation depends upon analysis of the pattern of energies of electrons that pass through the specimen. Has comparable resolving power to conventional transmission EM. (18 Nov 1997) |
| secondary electron | <microscopy> Produced by an incident electron passing near an atom in the specimen, near enough to impart some of its energy to a lower energy electron (usually in the K-shell). This causes a slight energy loss and path change in the incident electron and the ionisation of the electron in the specimen atom. This ionised electron then leaves the atom with a very small kinetic energy (5eV) and is then termed a secondary electron. Each incident electron can produce several secondary electrons. (05 Aug 1998) |
| secondary electron imaging | <microscopy> Production of secondary electrons is very topography related. Due to their low energy, 5eV, only secondaries that are very near the surface (less than 10nm) can exit the sample and be examined. Any changes in topography in the sample that are larger than this sampling depth will change the yield of secondaries due to collection efficiencies. Collection of these electrons is aided by using a collector in conjunction with the secondary electron detector. The collector is a grid or mesh with a +100V potential applied to it which is placed in front of the detector, attracting the negatively charged secondary electrons to it which then pass through the grid-holes and into the detector to be counted. When a Secondary Electrons collide with the solid-state saemiconductor detector an electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image. (05 Aug 1998) |
| Selected Area Electron Diffraction | <technique> In this diffraction mode an aperture is used to define the area from which a diffraction pattern is to be recorded from a thin sample. This aperture is typically located in an image plane below the sample. Selected Area Electron Diffraction patterns are simple spot patterns and are of use in phase determination (lattice spacing measurement) and defect analysis (sample orientation). Acronym: SAED (05 Aug 1998) |
| immune electron microscopy | Electron microscopy of biological specimens to which specific antibody has been bound. (05 Mar 2000) |
| internal conversion electron | An electron, similar to an Auger electron, released from one of the electron orbits of the atom upon activation by a gamma-ray from that atom's nucleus; the electron has kinetic energy equal to the net energy transition of the disintegration. (05 Mar 2000) |
| electron | <chemistry, physics> A stable atomic particle that has a negative charge, the flow ofelectrons through a substance constitutes electricity. (19 Jan 1998) |
| electron acceptor | <chemistry> A molecule or compound that gets electrons during an oxidation-reduction reaction. (19 Jan 1998) |
| electron beam | <microscopy> A stream of electrons in an electron optical system. (05 Aug 1998) |
| electron capture | <radiobiology> Nuclear decay process whereby a proton in the nucleus absorbs an orbiting electron and converts to a neutron. (09 Oct 1997) |
| electron carrier | <chemistry> A protein which can either accept or donate electrons in oxidation-reduction reactions. (19 Jan 1998) |
| Electron Channeling Pattern | <microscopy> A pattern formed by the periodic backscattering of electrons by the specimen lattice in a transmission electron microscope. Allows determination of crystal structure and lattice parameters in crystals greater than 10 micrometres diameter. Acronym: ECP (05 Aug 1998) |