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  • ¿µ¹®
    ÇѱÛ
  • valence electron
    ¿øÀÚ°¡ÀüÀÚ
  • beam
    1. ¹æÃâ 2. µéº¸ 3. ¼±, ºö, ºû»ì
  • beam alignment
    ºöÁ¤·Ä
  • beam attenuation
    ºö°¨¼è, ºö¾àÈ­
  • beam configuration
    ºö¹èÄ¡, ºö±¸Á¶, ºöÇüÅÂ
  • beam depth
    µéº¸±íÀÌ, À½¼Ó±íÀÌ
  • beam hardening effect
    ºö°æÈ­È¿°ú
  • beam profile
    ºöÃø¸éµµ, ¼ÓÃø¸é»ó, À½¼ÓÃø¸é»ó
  • beam scale
    ´ëÀú¿ï
  • beam splitting
    ¼±ºÐ¿­
  • beam width
    µéº¸Æø, ¼ÓÆø
  • beam-modifying device
    ºöº¯°æ±â±¸, ºû»ìº¯°æ±â±¸
  • beam-shaping device
    ºöÁ¤Çü±â±¸, ºû»ìÁ¤Çü±â±¸
  • beam-thickness artifact
    ¼±µÎ²²Çã»ó
  • beam-width artifact
    ºû»ìÆøÀΰø¹°
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  • ¿µ¹®
    ÇѱÛ
  • electron structure
    ÀüÀÚ±¸Á¶
  • emission electron
    ¹æÃâÀüÀÚ
  • free electron
    ÀÚÀ¯ÀüÀÚ
  • odd electron
    ȦÀüÀÚ
  • valence electron
    ¿øÀÚ°¡ÀüÀÚ
  • noncyclic electron flow
    ºñȸ·ÎÀüÀÚÀü´Þ
  • scanning electron microscope
    ½ºÄ³´×ÀüÀÚÇö¹Ì°æ
  • transmission electron microscope
    Åõ°úÀüÀÚÇö¹Ì°æ
  • beam alignment
    ºöÁ¤·Ä
  • beam attenuation
    ºö°¨¼è, ºö¾àÈ­
  • beam-thickness artifact
    À½¼ÓµÎ²²Çã»ó, À½¼ÓµÎ²²Àΰø¹°
  • beam-width artifact
    µéº¸ÆøÇã»ó, ¼ÓÆøÀΰø¹°
  • beam
    µéº¸, ºû»ì, ¼Ó, ¼±, ±¤¼Ó, À½¼Ó
  • beam configuration
    ºö¹èÄ¡, ºö±¸Á¶, ºöÇüÅÂ
  • beam depth
    µéº¸±íÀÌ, ¼Ò¸®µéº¸±íÀÌ, À½¼Ó±íÀÌ
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  • ¿µ¹®
    ÇѱÛ
  • beam axis
    ºöÃà
  • beam configuration
    ºö¹èÄ¡, ºö±¸Á¶, ºöÇüÅÂ
  • beam depth
    À½¼Ó (ëåáÖ) ±íÀÌ
  • beam depth
    ¼Ó ±íÀÌ
  • beam diameter
    À½¼Ó Á÷°æ (ëåáÖ òÁÌè)
  • beam diameter
    ¼Ó Á÷°æ
  • beam direction
    ºö¹æÇâ
  • beam geometry
    À½¼Ó ¸ð¾ç
  • beam geometry
    ¼Ó ¸ð¾ç
  • beam hardening (effect)
    ºö°æÈ­È¿°ú
  • beam harding artifact
    X-¼± °æÈ­ Àΰø¹°
  • beam profile
    ºöÃø¸éµµ
  • beam profile
    À½¼Ó Ãø¸é»ó (ëåáÖ ö°ØüßÀ)
  • beam profile
    ¼Ó Ãø¸é»ó
  • beam scale
    ´ëÀú¿ï.
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  • ¿µ¹®
    ÇѱÛ
  • electron transfer system
    ÀüÀÚÀü´Þ(ï³í­îîÓ¹) ½Ã½ºÅÛ
  • electron transport chain
    ÀüÀÚ¼ö¼Û(ï³í­âÃáê) »ç½½
  • electron transport particle
    ÀüÀÚ¼ö¼Û ÀÔÀÚ(ï³í­âÃáêØ£í­)
  • electron transport system
    ÀüÀÚ¼ö¼Û(ï³í­âÃáê) ½Ã½ºÅÛ
  • electron trap
    ÀüÀÚ(ï³í­) µ£
  • hydrated electron
    ¼öÈ­ ÀüÀÚ(â©ûùï³í­)
  • internal conversion electron
    ³»ºÎÀüȯ ÀüÀÚ(Үݻï®üµï³í­)
  • low-energy electron diffraction
    Àú(î¸)¿¡³ÊÁö ÀüÀÚȸÀý(ï³í­üÞï¹)
  • negative electron
    À½ÀüÀÚ(ëäï³í­)
  • odd electron
    Ȧ ÀüÀÚ(ï³í­)
  • orbital electron capture
    ±ËµµÀüÀÚ Æ÷ȹ(ÏùÔ³ï³í­øÙüò)
  • photosynthetic electron transport
    ±¤ÇÕ¼º ÀüÀÚ ¼ö¼Û(ï³í­âÃáê)
  • positive electron
    ¾çÀüÀÚ(åÕï³í­)
  • scanning electron microscope
    ÁÖ»ç ÀüÀÚ Çö¹Ì°æ(ñËÞÛï³í­úéÚ°Ìð)
  • secondary electron
    ÀÌÂ÷ ÀüÀÚ(ì£ó­ï³í­)
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  • unfocused beam
    ºñÁý¼Ó¼º À½¼Ó
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E/M electron microscope, electron microscopy; evaluation and management
AMBER advanced multiple-beam equalization radiography
BEAM brain electrical activity monitoring
BEV baboon endogenous virus; beam's eye view
SBRT split beam rotation therapy
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EBRT External beam irradiation
XRT External beam radiation therapy
ERT External beam radiotherapy
EBR external beam radiotherapy
FIB focused ion beam
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  • electron emission
    ÀüÀÚ ¹æÃâ
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  • electron hole
    ÀüÀÚ ±¸¸Û
  • electron microprobe analysis
    ÀüÀÚ ¹Ì¼¼ Žħ
  • electron microscopic radioautography
    ÀüÇö¹æ»ç¼± ÀÚ°¡ ±â·Ï¹ý, ÀüÇö ÀÚ±â¹ý
  • electron nonlinearity
    ÀüÀÚ ºñ¼±Çü¼º
  • electron orbit
    ÀüÀÚ °¢, ÀüÀÚ ±Ëµµ
  • electron pair
    ÀüÀÚ ½Ö
  • electron pair creation
    ÀüÀÚ½Ö Ã¢»ý
  • electron probe microanalysis technique
    ÀüÀÚ Å½Ä§ ¹Ì¼¼ ºÐ¼®¹ý
  • electron shell
    ÀüÀÚ °¢
  • electron structure of atom
    ¿øÀÚÀÇ ÀüÀÚ ±¸Á¶
  • electron transfer
    ÀüÀÚ À̵¿, ÀüÀÚ ¿î¹Ýü
  • electron tube
    ÀüÀÚ °ü
  • electron volt
    ÀüÀÚ º¼Æ®
  • electron-oscillation nonlinearity
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valence electron One of the electron's that take part in chemical reactions of an atom.
(05 Mar 2000)
Parallel Electron Energy Loss Spectroscopy <technique> Electron energy loss spectroscopy analyses the inelastically scattered electrons present in the beam after it has been transmitted through the sample. An electron energy loss spectrum typically consists of a monatomic decreasing background on which are superimposed a number of peaks. Each peak is characteristic of the scattering process that has occurred in the sample. The peaks can be used to obtain information about the chemical composition and electronic structure of the sample. Electron energy loss spectra are acquired typically in a magnetic sector spectrometer located under the camera chamber of the transmission electron microscope. Spatial resolution is typically limited by the minimum probe diameter of the microscope. Electron energy loss spectroscopy tends to be complimentary to EDS in that it can be used to analyse very thin samples of low Z materials.
Acronym: PEELS
(05 Aug 1998)
reverse electron transport <chemistry> The energy-dependent movement of electrons against the thermodynamic gradient to form a strong reductant from a weaker electron donor.
(11 Jan 1998)
microscope, electron <microscopy> An electron-optical device which produces a magnified image of an object. Detail may be revealed by virtue of selective transmission, reflection, or emission of electrons by the object.
(05 Aug 1998)
microscopy, electron Visual and photographic microscopy in which electron beams with wavelengths thousands of times shorter than visible light are used in place of light, thereby allowing much greater magnification.
(12 Dec 1998)
microscopy, electron, scanning Microscopy in which the object is examined directly by an electron beam scanning the specimen point-by-point, giving the surface image a three-dimensional quality.
(12 Dec 1998)
microscopy, electron, scanning transmission A type of electron microscopy which scans with an extremely narrow beam that is transmitted through the sample. The detection apparatus produces an image whose brightness depends on the atomic number of the sample. It should not be confused with microscopy, electron scanning nor with microscopy, electron, transmission (see microscopy, electron).
(12 Dec 1998)
Conventional Transmission Electron Microscopy <technique> A term applied to 'normal' transmission electron microscopy imaging. The electron beam is passed through a thin film sample (typically ~1-200 nm thick). Bright field diffraction contrast images are formed with the direct (undiffracted) beam. Dark field images are formed with a selected diffracted beam. CTEM imaging is used in the general observation of samples and careful selection of the diffracting conditions of the sample will allow the analysis of defect structures within the sample.
(05 Aug 1998)
conversion electron An internal conversion electron.
(05 Mar 2000)
positive electron A subatomic particle of mass and charge equal to the electron but of opposite (i.e., positive) charge.
Synonym: positive electron.
(05 Mar 2000)
scanning electron microscope <instrument> An electron microscope in which the image is formed by a beam synchronised with an electron probe scanning the object.
The intensity of the image forming beam is proportional to the scattering or secondary emission of the specimen where the probe strikes it
(05 Aug 1998)
scanning electron microscopy <procedure> Technique of electron microscopy in which the specimen is coated with heavy metal and then scanned by an electron beam. The image is built up on a monitor screen (in the same way as the raster builds a conventional television image). The resolution is not so great as with transmission electron microscopy, but preparation is easier (often by fixation followed by critical point drying), the depth of focus is relatively enormous, the surface of a specimen can be seen (though not the interior unless the specimen is cracked open) and the image is aesthetically pleasing.
(18 Nov 1997)
scanning transmission electron microscopy <procedure> Method of electron microscopy in which image formation depends upon analysis of the pattern of energies of electrons that pass through the specimen. Has comparable resolving power to conventional transmission EM.
(18 Nov 1997)
secondary electron <microscopy> Produced by an incident electron passing near an atom in the specimen, near enough to impart some of its energy to a lower energy electron (usually in the K-shell). This causes a slight energy loss and path change in the incident electron and the ionisation of the electron in the specimen atom. This ionised electron then leaves the atom with a very small kinetic energy (5eV) and is then termed a secondary electron. Each incident electron can produce several secondary electrons.
(05 Aug 1998)
secondary electron imaging <microscopy> Production of secondary electrons is very topography related. Due to their low energy, 5eV, only secondaries that are very near the surface (less than 10nm) can exit the sample and be examined. Any changes in topography in the sample that are larger than this sampling depth will change the yield of secondaries due to collection efficiencies. Collection of these electrons is aided by using a collector in conjunction with the secondary electron detector. The collector is a grid or mesh with a +100V potential applied to it which is placed in front of the detector, attracting the negatively charged secondary electrons to it which then pass through the grid-holes and into the detector to be counted. When a Secondary Electrons collide with the solid-state saemiconductor detector an electron-hole pairs are created which are then counted. This quantity is translated into a pixel intensity and displayed on the CRT, forming the image.
(05 Aug 1998)
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    ÇѱÛ
  • flitch beam
    °ãµéº¸;ÇÕ·®
  • flitched beam
    °ãµéº¸;ÇÕ·®
  • ground beam
    =GROUNDSEL;ħ¸ñ 
  • hammer beam
    ¿ÜÆÈµéº¸
  • high beam
    ÇÏÀ̺ö(¿ø°Å¸®¿ë »óÇâ Çìµå¶óÀÌÆ®)
  • landing beam
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  • particle beam
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